Following is a CAS database record representing a highly cited patent family.
|
CAS indexed 4 chemical substances from this document.
CAS subject entries for this document include: Optical imaging devices; Electric circuits. | |
CAPLUS COPYRIGHT 2006 ACS on STN
| TITLE:
| Membrane dielectrically isolated IC fabrication |
| INVENTOR(S):
| Leedy, Glenn J. |
| PATENT ASSIGNEE(S):
| USA |
| SOURCE:
| PCT Int. Appl., 165 pp. CODEN: PIXXD2 |
| LANGUAGE:
| English |
PATENT INFORMATION: PATENT NO. KIND DATE APPLICATION NO. DATE
--------------- ---- -------- -------------------- --------
WO 9321748 A1 19931028 WO 1993-US3140 19930402
W: BR, JP, KR
RW: AT, BE, CH, DE, DK, ES, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE
US 5354695 A 19941011 US 1992-865412 19920408
EP 641485 A1 19950308 EP 1993-910567 19930402
R: CH, DE, ES, FR, GB, IE, IT, LI, SE
JP 07508614 T2 19950921 JP 1993-518399 19930402
BR 9306232 A 19980623 BR 1993-6232 19930402
EP 1233444 A2 20020821 EP 2002-9643 19930402
R: CH, DE, ES, FR, GB, IT, LI, SE, IE
US 5571741 A 19961105 US 1995-474449 19950607
US 5592018 A 19970107 US 1995-475796 19950607
US 5592007 A 19970107 US 1995-484029 19950607
US 5633209 A 19970527 US 1995-474448 19950607
US 5637907 A 19970610 US 1995-477785 19950607
US 5654220 A 19970805 US 1995-475770 19950607
US 5834334 A 19981110 US 1995-484144 19950607
US 5946559 A 19990831 US 1995-472426 19950607
US 6714625 B1 20040330 US 1995-483731 19950607
US 6020257 A 20000201 US 1997-779679 19970107
US 5985693 A 19991116 US 1997-850749 19970502
US 6008126 A 19991228 US 1998-28081 19980223
US 2002014673 A1 20020207 US 2001-775670 20010205
US 6713327 B2 20040330
US 2002045297 A1 20020418 US 2001-775598 20010205
US 6765279 B2 20040720
US 2003057513 A1 20030327 US 2001-775597 20010205
US 6682981 B2 20040127
US 2003223535 A1 20031204 US 2003-385386 20030307
US 2003218182 A1 20031127 US 2003-460027 20030611
US 2005051841 A1 20050310 US 2003-460483 20030611
US 2005176174 A1 20050811 US 2003-665757 20030919
US 2004197951 A1 20041007 US 2003-700429 20031103
JP 2004179670 A2 20040624 JP 2003-411689 20031210
JP 2004193618 A2 20040708 JP 2003-411658 20031210
US 2004132303 A1 20040708 US 2003-742057 20031218
US 2005082626 A1 20050421 US 2003-741647 20031218
US 2004150068 A1 20040805 US 2003-742282 20031219
US 2004192045 A1 20040930 US 2004-766629 20040127
US 2005130351 A1 20050616 US 2004-766557 20040127
US 2005082641 A1 20050421 US 2004-971341 20041022
US 2005156265 A1 20050721 US 2005-42581 20050124
ABSTRACT:
Integrated circuits are fabricated from flexible membranes formed of very thin low-stress dielec. materials, such as SiO2 or Si nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor layer of the membrane. The semiconductor membrane layer is initially formed from a substrate of std. thickness, and all but a thin surface layer of the substrate is then etched or polished away. In another version, the flexible membrane is used as support and elec. interconnect for a conventional integrated circuit die bonded to it, with the interconnect formed in multiple layers in the membrane. Multiple dice can be connected to 1 such membrane, which is then packaged as a multichip module. Other applications are based on (circuit) membrane processing for bipolar and MOSFET fabrication, low-impedance conductor interconnection fabrication, flat-panel displays, maskless (direct write) lithog., and 3-dimensional IC fabrication.
Updated 5/3/2007 2:21:15 PM
