Following is a CAS database record representing a highly cited patent family.
|
CAS indexed 3 chemical substances from this document.
CAS subject entries for this document include: Sputtering; Etching. | |
CAPLUS COPYRIGHT 2004 ACS on STN
| TITLE:
| Methods for anisotropic etching of silicon |
| INVENTOR(S):
| Laermer, Franz; Schilp, Andrea |
| PATENT ASSIGNEE(S):
| Bosch, Robert, G.m.b.H., Germany |
| SOURCE:
| Ger., 6 pp. CODEN: GWXXAW |
| LANGUAGE:
| German |
PATENT INFORMATION: PATENT NO. KIND DATE APPLICATION NO. DATE
--------------- ---- -------- --------------- --------
DE 4241045 C1 19940526 DE 1992-4241045 19921205
WO 9414187 A1 19940623 WO 1993-DE1129 19931127
W: JP, US
RW: AT, BE, CH, DE, DK, ES, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE
EP 625285 A1 19941123 EP 1994-900729 19931127
EP 625285 B1 20000322
R: DE, FR, GB
US 5501893 A 19960326 US 1994-284490 19940805
ABSTRACT:
Methods for anisotropic plasma etching of silicon, esp. in producing structures defined by masks, are described in which the etching is accomplished in alternating independently controlled steps; polymn. steps in which a polymer is formed on the lateral boundaries of the structure defined by the mask and etching steps in which the polymer deposited previously is removed at least in part. The methods allow deep structures to be formed without undercutting or loss of mask resoln.
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Updated 5/3/2007 11:33:16 AM
