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Home   •   Spotlight  •  pcite00  •  Most Cited Patent Families 2000-Chemistry and Related (6)

Most Cited Patent Families 2000-Chemistry and Related

Following is a CAS database record representing a highly cited patent family.

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CAS indexed 4 chemical substances from this document. CAS subject entries for this document include: Films; Reactors; Sputtering; and 1 additional concept.

CAPLUS COPYRIGHT 2001 ACS

TITLE:	Thermal chemical vapor deposition/plasma-enhanced chemical vapor deposition reactors and their use for the deposition of silica and for in situ multistep planarization processes
INVENTOR(S):	Wang, David Nin Kou; White, John M.; Law, Kam S.; Leung, Cissy; Umotoy, Salvador P.; Collins, Kenneth S.; Adamik, John A.; Perlov, Ilya; Maydan, Dan
PATENT ASSIGNEE(S):	Applied Materials, Inc., USA
SOURCE:	Eur. Pat. Appl., 32 pp. CODEN: EPXXDW
LANGUAGE:	English

PATENT INFORMATION:

PATENT NO.       KIND  DATE           APPLICATION NO.  DATE
---------------  ----  --------       ---------------  --------
EP 272140         A2   19880622       EP 1987-311193   19871218
EP 272140         A3   19901114EP 272140         B1   19940223
    R:  AT, BE, CH, DE, ES, FR, GB, GR, IT, LI, LU, NL, SE
US 5000113        A    19910319       US 1986-944492   19861219
JP 63246829       A2   19881013       JP 1987-321181   19871218
JP 06012771       B4   19940216
AT 101879         E    19940315       AT 1987-311193   19871218
ES 2049729        T3   19940501       ES 1987-311193   19871218
US 4872947        A    19891010       US 1988-262992   19881026
US 4892753        A    19900109       US 1988-262993   19881026
US 4960488        A    19901002       US 1989-455799   19891219
US 5362526        A    19941108       US 1991-645999   19910123
US 5158644        A    19921027       US 1991-777423   19911010
US 5354715        A    19941011       US 1992-861719   19920401
US 6167834        B1   20010102       US 1992-928642   19920813
JP 06013368       A2   19940121       JP 1993-38904    19930226
JP 2651102        B2   19970910
JP 06013367       A2   19940121       JP 1993-38905    19930226
US 5755886        A    19980526       US 1995-483750   19950607
US 5871811        A    19990216       US 1995-477536   19950607
JP 08055843       A2   19960227       JP 1995-201143   19950807
JP 2723845        B2   19980309
JP 08070035       A2   19960312       JP 1995-201144   19950807
JP 2584960        B2   19970226
US 36623          E    20000321       US 1996-752972   19961202

ABSTRACT:
Semiconductor processing reactors (e.g., capable of carrying out single or multiple step processing sequences selected from thermal chem. vapor deposition (CVD), plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and topog. modification by sputtering) are described, which may include features such as an automatic wafer transport system, a gas inlet manifold adapted to provide uniform gas flow over a wafer, a combined radiofrequency (RF)/gas feed-through device which can apply RF energy to the gas manifold without internal breakdown of or deposition from the gas(es), temp. control of manifold surfaces, and a uniform radical gas pumping system. The reactors are capable of operating over a relatively wide pressure range and at relatively high pressures (e.g., .ltoreq.1 atm.). Methods for forming SiO2 layers on substrates held at 200-500.degree. are also described, which entail exposing the substrate to a plasma formed from a gas mixt. comprising O2, tetraethylorthosilicate (TEOS), and a carrier gas, or (for conformal layers) to a reactive species formed from O2, O3, TEOS, and a carrier gas. Planarized composite dielec. layers may be formed by combinations of the above SiO2 deposition methods in combination with etching processes.

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